IXTK17N120L

new-10%

Manufacturer part number:IXTK17N120L

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 17A TO-264

Case Package:SOT-23

Datasheet:IXTK17N120L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	900MOhm
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 8.5A, 20V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 15V
Rise Time	39ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Fall Time (Typ)	63 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	17A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	2500 mJ
Height	26.16mm
Length	19.96mm
Width	5.13mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free