BSC160N15NS5ATMA1

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BSC160N15NS5ATMA1

Manufacturer part number:BSC160N15NS5ATMA1

Manufacturer:Infineon Technologies

Description:BSC160N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSC160N15NS5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	96W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	96W
Case Connection	DRAIN
Turn On Delay Time	9.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 28A, 10V
Vgs(th) (Max) @ Id	4.6V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds	1820pF @ 75V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	23.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	10.8 ns
Continuous Drain Current (ID)	56A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	224A
Avalanche Energy Rating (Eas)	43 mJ
Max Junction Temperature (Tj)	150°C
Height	1.1mm
RoHS Status	ROHS3 Compliant