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CSD17381F4

CSD17381F4

CSD17381F4

Texas Instruments

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 109m Ω @ 500mA, 8A 195pF @ 15V 1.35nC @ 4.5V 3-XFDFN

SOT-23

CSD17381F4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier 3-PICOSTAR
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17381
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 109m Ω @ 500mA, 8A
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.1A Ta
Gate Charge (Qg) (Max) @ Vgs 1.35nC @ 4.5V
Rise Time 1.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 10.8 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage 30V
Feedback Cap-Max (Crss) 2.9 pF
Height 350μm
Length 1.035mm
Width 635μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.45000 $0.45
500 $0.4455 $222.75
1000 $0.441 $441
1500 $0.4365 $654.75
2000 $0.432 $864
2500 $0.4275 $1068.75
CSD17381F4 Product Details

CSD17381F4 Description


The design and optimization of this 90 m, 30 V N-Channel FemtoFETTM MOSFET technology minimizes the footprint in numerous handheld and mobile applications. Standard tiny signal MOSFETs can be replaced with this technology, which also offers a footprint size reduction of at least 60%.



CSD17381F4 Features


  • Ultra-low on-resistance

  • Ultra-low Qg and Qgd

  • Low threshold voltage

  • Ultra-small footprint (0402 case size)

  • Lead and halogen free

  • RoHS compliant



CSD17381F4 Applications


  • Optimized for load switch applications

  • Optimized for general purpose switching applications

  • Single-cell battery applications

  • Handheld and mobile applications


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