STL42P6LLF6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STL42P6LLF6 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Manufacturer Package Identifier
PowerFLAT5x6-A0ER_8231817
Operating Temperature
175°C TJ
Packaging
Cut Tape (CT)
Series
STripFET™ F6
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STL42
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
4.8W
Case Connection
DRAIN
Turn On Delay Time
51.4 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
26m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
171 ns
Continuous Drain Current (ID)
-42A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.034Ohm
Drain to Source Breakdown Voltage
-60V
Max Junction Temperature (Tj)
175°C
Height
1mm
Length
6.35mm
Width
5.4mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STL42P6LLF6 Product Details
STL42P6LLF6 Description
STL42P6LLF6 is a kind of P-channel power MOSFET that is manufactured by STMicroelectronics on the basis of STripFET F6 technology and a new trench gate structure. As a result, low on-resistance, low gate charge, high avalanche ruggedness, and low gate drive power loss can be ensured based on the technology.
STL42P6LLF6 Features
Low on-resistance Low gate charge Available in the PowerFLAT 5x6 type C SUBCON package