IXTP130N10T Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5080pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP130N10T Features

the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 44 ns

IXTP130N10T Applications

There are a lot of IXYS
IXTP130N10T applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching