IXTP88N085T

new-10%

Manufacturer part number:IXTP88N085T

Manufacturer:IXYS

Description:MOSFET N-CH 85V 88A TO-220

Case Package:SOT-23

Datasheet:IXTP88N085T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	TrenchMV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	54ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	88A
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	0.011Ohm
Drain to Source Breakdown Voltage	85V
Pulsed Drain Current-Max (IDM)	240A
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	RoHS Compliant