CSD16325Q5C

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CSD16325Q5C

Manufacturer part number:CSD16325Q5C

Manufacturer:Texas Instruments

Description:CSD16325Q5C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD16325Q5C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 4 weeks ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD16325
Pin Count	8
Number of Elements	1
Power Dissipation-Max	3.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	10.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2m Ω @ 30A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	33A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Rise Time	16ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	33A
Drain-source On Resistance-Max	0.0029Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	500 mJ
Nominal Vgs	1.1 V
Height	1.05mm
Length	5mm
Width	6mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead