IXTT50P085

new-10%

Manufacturer part number:IXTT50P085

Manufacturer:IXYS

Description:MOSFET P-CH 85V 50A TO-268

Case Package:SOT-23

Datasheet:IXTT50P085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drain to Source Voltage (Vdss)	85V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	50A
Drain-source On Resistance-Max	0.055Ohm
Pulsed Drain Current-Max (IDM)	200A
DS Breakdown Voltage-Min	85V
RoHS Status	RoHS Compliant