SI6404DQ-T1-E3

new-10%

Manufacturer part number:SI6404DQ-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 8.6A 8TSSOP

Case Package:SOT-23

Datasheet:SI6404DQ-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.08W Ta
Element Configuration	Single
Power Dissipation	1.08W
Turn On Delay Time	35 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	600mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	8.6A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Rise Time	35ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	8.6A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	9mOhm
Rds On Max	9 mΩ
Nominal Vgs	600 mV
Height	1mm
Length	3mm
Width	4.4mm
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant