FQA13N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQA13N80 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
QFET®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
12.6A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
750m Ω @ 6.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12.6A Tc
Gate Charge (Qg) (Max) @ Vgs
88nC @ 10V
Rise Time
150ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
110 ns
Turn-Off Delay Time
155 ns
Continuous Drain Current (ID)
12.6A
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.75Ohm
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
50.4A
Avalanche Energy Rating (Eas)
1100 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FQA13N80 Product Details
FQA13N80 Description
A patented planar stripe and DMOS manufacturing process is used to create the FQA13N80 N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.