FQPF9N25 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FQPF9N25 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
6.7A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
420m Ω @ 3.35A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.7A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
105ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
6.7A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
8.8A
Drain-source On Resistance-Max
0.43Ohm
Drain to Source Breakdown Voltage
250V
Pulsed Drain Current-Max (IDM)
35.2A
Avalanche Energy Rating (Eas)
285 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FQPF9N25 Product Details
FQPF9N25 Description
Fairchild's unique planar stripe DMOS technology is used to make these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high energy pulses. These devices are ideal for switching DC/DC converters with high efficiency and switch mode power supplies.