IXTT88N30P

new-10%

Manufacturer part number:IXTT88N30P

Manufacturer:IXYS

Description:MOSFET N-CH 300V 88A TO-268

Case Package:SOT-23

Datasheet:IXTT88N30P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	600W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	96 ns
Continuous Drain Current (ID)	88A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	220A
Avalanche Energy Rating (Eas)	2000 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free