SIA449DJ-T1-GE3 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2140pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [39 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30A.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -1.5V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).

SIA449DJ-T1-GE3 Features

a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 30A.
a 30V drain to source voltage (Vdss)

SIA449DJ-T1-GE3 Applications

There are a lot of Vishay Siliconix
SIA449DJ-T1-GE3 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies