FDV304P Description

This P-Channel enhancement mode field effect transistors is produced using ON Semiconductor's proprietary, high cell

density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive

conditions. This device is designed especially for application in battery power applications such as notebook computers

and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

FDV304P Features

-25 V, -0.46 A continuous, -1.5 A Peak.

RDS(ON) = 1.1 W @ VGS = -4.5 V

RDS(ON) = 1.5 W @ VGS= -2.7 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.