CSD17575Q3

new-10%

CSD17575Q3

Manufacturer part number:CSD17575Q3

Manufacturer:Texas Instruments

Description:CSD17575Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD17575Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17575
Number of Elements	1
Power Dissipation-Max	2.8W Ta 108W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4420pF @ 15V
Current - Continuous Drain (Id) @ 25°C	60A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	27A
Drain-source On Resistance-Max	0.0032Ohm
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	115 mJ
Feedback Cap-Max (Crss)	204 pF
Length	3.3mm
Width	3.3mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead