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CSD17575Q3

CSD17575Q3

CSD17575Q3

Texas Instruments

CSD17575Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD17575Q3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17575
Number of Elements 1
Power Dissipation-Max 2.8W Ta 108W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4420pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Rise Time10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0032Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 115 mJ
Feedback Cap-Max (Crss) 204 pF
Length 3.3mm
Width 3.3mm
Thickness 1mm
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:6138 items

Pricing & Ordering

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CSD17575Q3 Product Details

CSD17575Q3 Description


CSD17575Q3 is a 30v N-channel NexFETTM Power MOSFET. This power MOSFET can be applied in Networking, Telecom, and Computing Systems, and is optimized for Synchronous FET Applications due to the following features. This 1.9 mΩ, 30 V, NexFET? power MOSFET is designed to minimize losses in power conversion applications. The CSD17575Q3 is offered in the VSON-CLIP-8 package. It is specified for operation from –55°C to +150°C.



CSD17575Q3 Features


  • Low Qg and Qgd

  • Low RDS(on)

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 3.3 mm × 3.3 mm Plastic Package



CSD17575Q3 Applications


  • Networking

  • Telecom

  • Computing Systems

  • Synchronous FET Applications


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