IXTV110N25TS

new-10%

Manufacturer part number:IXTV110N25TS

Manufacturer:IXYS

Description:MOSFET N-CH 250V 110A PLUS220SMD

Case Package:SOT-23

Datasheet:IXTV110N25TS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PLUS-220SMD
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	694W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	694W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 55A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	157nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	110A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	250V
Avalanche Energy Rating (Eas)	1000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free