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NGTB40N120FL3WG

  • NGTB40N120FL3WG
  • NGTB40N120FL3WG

NGTB40N120FL3WG

NGTB40N120FL3WG

ON Semiconductor

NGTB40N120FL3WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB40N120FL3WG Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Tin (Sn)
Max Power Dissipation 454W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 454W
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 160A
Reverse Recovery Time 136 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 212nC
Td (on/off) @ 25°C 18ns/145ns
Switching Energy 1.6mJ (on), 1.1mJ (off)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.17000 $6.17
30 $5.27300 $158.19
120 $4.59567 $551.4804
510 $3.94096 $2009.8896
1,020 $3.35400 $3.354
NGTB40N120FL3WG Product Details

NGTB40N120FL3WG IGBT Description


This Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, delivering both low on-state voltage and little switching loss. It is constructed using a durable and cost-effective Ultra Field Stop Trench design. The IGBT is a good choice for solar and UPS applications. A soft and fast co packaged free wheeling diode with a low forward voltage is incorporated into the device. NGTB40N120FL3WG has a high maximum junction temperature of 175°C and is improved for high-speed switching purpose applications.



NGTB40N120FL3WG IGBT Features


Extremely Efficient Trench with Ultra Field Stop Technology

TJmax = 175°C

Soft Fast Reverse Recovery Diode

Optimized for High-Speed Switching

These are Pb?Free Devices



NGTB40N120FL3WG IGBT Applications


Solar Inverter

Uninterruptible Power Inverter Supplies (UPS)

Welding

Industrial Applications

Automobiles

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