STGFW40V60F  Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, representing an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling.

STGFW40V60F  Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.8 V (typ.) @ IC = 40 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

STGFW40V60F  Applications

Welding

Power factor correction

UPS

Solar inverters

Chargers