FGAF40N60UFTU

new-10%

Manufacturer part number:FGAF40N60UFTU

Manufacturer:ON Semiconductor

Description:FGAF40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGAF40N60UFTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Number of Pins	3
Weight	6.962g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	40A
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Continuous Drain Current (ID)	40A
Collector Emitter Breakdown Voltage	600V
Drain to Source Breakdown Voltage	600V
Collector Emitter Saturation Voltage	3V
Turn On Time	67 ns
Test Condition	300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 20A
Turn Off Time-Nom (toff)	190 ns
Gate Charge	77nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	15ns/65ns
Switching Energy	470μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	250ns
Height	26.5mm
Length	15.5mm
Width	5.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free