IGA30N60H3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGA30N60H3XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Series
TrenchStop®
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
43W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
43W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
18A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Turn On Time
40 ns
Test Condition
400V, 30A, 10.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Turn Off Time-Nom (toff)
262 ns
IGBT Type
Trench Field Stop
Gate Charge
165nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
18ns/207ns
Switching Energy
1.17mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.64000
$1.64
500
$1.6236
$811.8
1000
$1.6072
$1607.2
1500
$1.5908
$2386.2
2000
$1.5744
$3148.8
2500
$1.558
$3895
IGA30N60H3XKSA1 Product Details
IGA30N60H3XKSA1 Description
A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.