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IXXX300N60B3

  • IXXX300N60B3
  • IXXX300N60B3

IXXX300N60B3

IXXX300N60B3

IXYS

Trans IGBT Chip N-CH 600V 550A 2300000mW 3-Pin(3+Tab) PLUS 247

SOT-23

IXXX300N60B3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
HTS Code 8541.90.00.00
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.3kW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.3kW
Case Connection COLLECTOR
Input Type Standard
Power - Max 2300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 550A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.3V
Turn On Time 137 ns
Test Condition 400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Turn Off Time-Nom (toff) 430 ns
IGBT Type PT
Gate Charge 460nC
Current - Collector Pulsed (Icm) 1140A
Td (on/off) @ 25°C 50ns/190ns
Switching Energy 3.45mJ (on), 2.86mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $49.269795 $49.269795
10 $46.480938 $464.80938
100 $43.849942 $4384.9942
500 $41.367870 $20683.935
1000 $39.026292 $39026.292

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