IXYA8N90C3D1

new-10%

Manufacturer part number:IXYA8N90C3D1

Manufacturer:IXYS

Description:IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode

Case Package:SOT-23

Datasheet:IXYA8N90C3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.946308g
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
Series	GenX3™, XPT™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Reach Compliance Code	not_compliant
Element Configuration	Single
Input Type	Standard
Power - Max	125W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	20A
Reverse Recovery Time	114 ns
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.5V
Test Condition	450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 8A
Gate Charge	13.3nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	16ns/40ns
Switching Energy	460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant