APT25GN120SG

new-10%

Manufacturer part number:APT25GN120SG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(2+Tab) D3PAK

Case Package:SOT-23

Datasheet:APT25GN120SG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	272W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	22 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	280 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	67A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	39 ns
Test Condition	800V, 25A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 25A
Continuous Collector Current	67A
Turn Off Time-Nom (toff)	560 ns
IGBT Type	Trench Field Stop
Gate Charge	155nC
Current - Collector Pulsed (Icm)	75A
Td (on/off) @ 25°C	22ns/280ns
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.08mm
Length	16.05mm
Width	13.99mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free