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IKW75N60TFKSA1

IKW75N60TFKSA1

IKW75N60TFKSA1

Infineon Technologies

IKW75N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW75N60TFKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH SWITCHING SPEED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 428W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 121ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 80A
Turn On Time 69 ns
Test Condition 400V, 75A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Turn Off Time-Nom (toff) 401 ns
IGBT Type Trench Field Stop
Gate Charge 470nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 33ns/330ns
Switching Energy 4.5mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.36000 $9.36
10 $8.51900 $85.19
240 $7.16738 $1720.1712
720 $6.32672 $4555.2384
1,200 $5.59571 $5.59571
IKW75N60TFKSA1 Product Details

IKW75N60TFKSA1 Description


IKW75N60TFKSA1 is a single N-channel IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IKW75N60TFKSA1 is -40°C~175°C TJ and its maximum power dissipation is 428W. IKW75N60TFKSA1 has 3 pins and it is available in Tube packaging way. The Reverse Recovery Time of IKW75N60TFKSA1 is 121ns.



IKW75N60TFKSA1 Features


  • Very low VCE(sat) 1.5V (typ.)

  • Maximum Junction Temperature 175°C

  • Short circuit withstand time 5s

  • Positive temperature coefficient in VCE(sat)

  • very tight parameter distribution

  • high ruggedness, temperature stable behaviour very high switching speed

  • Low EMI

  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant



IKW75N60TFKSA1 Applications


  • Frequency Converters

  • Uninterrupted Power Supply


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