IXYK120N120C3

new-10%

Manufacturer part number:IXYK120N120C3

Manufacturer:IXYS

Description:IGBT 1200V 240A 1500W TO264

Case Package:SOT-23

Datasheet:IXYK120N120C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.5kW
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.5kW
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	1500W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	240A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.55V
Turn On Time	105 ns
Test Condition	600V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 120A
Turn Off Time-Nom (toff)	346 ns
Gate Charge	412nC
Current - Collector Pulsed (Icm)	700A
Td (on/off) @ 25°C	35ns/176ns
Switching Energy	6.75mJ (on), 5.1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free