IXYY8N90C3

new-10%

Manufacturer part number:IXYY8N90C3

Manufacturer:IXYS

Description:IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3

Case Package:SOT-23

Datasheet:IXYY8N90C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	125W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	20A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	39 ns
Test Condition	450V, 8A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 8A
Turn Off Time-Nom (toff)	238 ns
Gate Charge	13.3nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	16ns/40ns
Switching Energy	460μJ (on), 180μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	ROHS3 Compliant