MWI25-12A7T

new-10%

Manufacturer part number:MWI25-12A7T

Manufacturer:IXYS

Description:Trans IGBT Module N-CH 1.2KV 50A 24-Pin E2-Pack

Case Package:SOT-23

Datasheet:MWI25-12A7T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	E2
Number of Pins	24
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	13
Terminal Finish	Matte Tin (Sn)
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	225W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	24
JESD-30 Code	R-XUFM-X13
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	225W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	50A
Current - Collector Cutoff (Max)	2mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	1.65nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 25A
Turn Off Time-Nom (toff)	570 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.65nF @ 25V
VCEsat-Max	2.7 V
Height	17mm
Length	107.5mm
Width	45mm
RoHS Status	ROHS3 Compliant