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MCMN2012-TP

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  • MCMN2012-TP

MCMN2012-TP

MCMN2012-TP

Micro Commercial Co

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11m Ω @ 9.7A, 4.5V ±10V 1800pF @ 4V 32nC @ 5V 20V 6-WDFN Exposed Pad

SOT-23

MCMN2012-TP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 4V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±10V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MCMN2012-TP Product Details

MCMN2012-TP Overview


The maximum input capacitance of this device is 1800pF @ 4V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.2V 4.5V), this device helps reduce its power consumption.

MCMN2012-TP Features


a 20V drain to source voltage (Vdss)


MCMN2012-TP Applications


There are a lot of Micro Commercial Co
MCMN2012-TP applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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