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MMBT5550-TP

  • MMBT5550-TP
  • MMBT5550-TP

MMBT5550-TP

MMBT5550-TP

Micro Commercial Co

MMBT5550-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website

SOT-23

MMBT5550-TP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 600mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.200000 $0.2
10 $0.188679 $1.88679
100 $0.177999 $17.7999
500 $0.167924 $83.962
1000 $0.158419 $158.419
MMBT5550-TP Product Details

MMBT5550-TP Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 5mA, 50mA.Single BJT transistor shows a 140V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MMBT5550-TP Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA

MMBT5550-TP Applications


There are a lot of Micro Commercial Co MMBT5550-TP applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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