BSP61E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BSP61E6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.11000
$0.11
500
$0.1089
$54.45
1000
$0.1078
$107.8
1500
$0.1067
$160.05
2000
$0.1056
$211.2
2500
$0.1045
$261.25
BSP61E6327HTSA1 Product Details
BSP61E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.When VCE saturation is 1.8V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).This product comes in a PG-SOT223-4 device package from the supplier.The device has a 60V maximal voltage - Collector Emitter Breakdown.
BSP61E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V the vce saturation(Max) is 1.8V @ 1mA, 1A the supplier device package of PG-SOT223-4
BSP61E6327HTSA1 Applications
There are a lot of Rochester Electronics, LLC BSP61E6327HTSA1 applications of single BJT transistors.