MPSA55-BP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MPSA55-BP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-PBCY-W3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625MW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
MPSA55-BP Product Details
MPSA55-BP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.The part has a transition frequency of 50MHz.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MPSA55-BP Features
the DC current gain for this device is 100 @ 100mA 1V the vce saturation(Max) is 250mV @ 10mA, 100mA a transition frequency of 50MHz
MPSA55-BP Applications
There are a lot of Micro Commercial Co MPSA55-BP applications of single BJT transistors.