PN4143 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PN4143 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Terminal Position
BOTTOM
Terminal Form
WIRE
Reach Compliance Code
unknown
JESD-30 Code
O-PBCY-W3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
800mA
Transition Frequency
200MHz
Power Dissipation-Max (Abs)
0.625W
Collector-Base Capacitance-Max
8pF
PN4143 Product Details
PN4143 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
PN4143 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 200MHz
PN4143 Applications
There are a lot of ON Semiconductor PN4143 applications of single BJT transistors.