PHE13003A,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
PHE13003A,126 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Power - Max
2.1W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 400mA 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
1A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PHE13003A,126 Product Details
PHE13003A,126 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 400mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 750mA.The device has a 400V maximal voltage - Collector Emitter Breakdown.
PHE13003A,126 Features
the DC current gain for this device is 10 @ 400mA 5V the vce saturation(Max) is 1.5V @ 250mA, 750mA
PHE13003A,126 Applications
There are a lot of WeEn Semiconductors PHE13003A,126 applications of single BJT transistors.