DN2625DK6-G Description

The DN2625DK6-G is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this DN2625DK6-G is free from thermal runaway and thermally induced secondary breakdown.

DN2625DK6-G Features

Very Low Gate Threshold Voltage

Designed to be Source-driven

Low Switching Losses

Low Effective Output Capacitance

Designed for Inductive Loads

DN2625DK6-G Applications

Medical Ultrasound Beamforming

Ultrasonic Array-focusing Transmitter

Piezoelectric Transducer Waveform Drivers

High-speed Arbitrary Waveform Generator

Normally-on Switches

Solid-state Relays

Constant Current Sources

Power Supply Circuits