US6K4TR

new-10%

Manufacturer part number:US6K4TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 20V 1.5A TUMT6

Case Package:SOT-23

Datasheet:US6K4TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Supplier Device Package	TUMT6
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Base Part Number	*K4
Element Configuration	Dual
Power Dissipation	1W
Turn On Delay Time	5 ns
Power - Max	1W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.5A
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	1.5A
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	20V
Input Capacitance	110pF
FET Feature	Logic Level Gate
Drain to Source Resistance	130mOhm
Rds On Max	180 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free