2N7002DWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
SOT-23
2N7002DWH6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation
500mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
3 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
300mA
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 10V
Rise Time
3.3ns
Fall Time (Typ)
3.1 ns
Turn-Off Delay Time
5.5 ns
Continuous Drain Current (ID)
115mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.3A
Drain-source On Resistance-Max
3Ohm
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
3 pF
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.142078
$0.142078
10
$0.134036
$1.34036
100
$0.126449
$12.6449
500
$0.119292
$59.646
1000
$0.112540
$112.54
2N7002DWH6327XTSA1 Product Details
2N7002DWH6327XTSA1 Description
Small signal bipolar junction transistors (BJT) rely on the contact between two different types of semiconductors to switch or amplify electronic signals and power supplies. Transistors are used in almost every modern electronic device, and BJT is often implemented as part of integrated circuits.