VT6M1T2CR

new-10%

Manufacturer part number:VT6M1T2CR

Manufacturer:ROHM Semiconductor

Description:MOSFET N/P-CH 20V 0.1A VMT6

Case Package:SOT-23

Datasheet:VT6M1T2CR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	1997
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	120mW
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	6
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
Power - Max	120mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	7.1pF @ 10V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	100mA
Drain Current-Max (Abs) (ID)	0.1A
Drain-source On Resistance-Max	4.2Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.2V Drive
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free