TN0106N3-G-P013

new-10%

Manufacturer part number:TN0106N3-G-P013

Manufacturer:Microchip Technology

Description:MOSFET N-CH Enhancmnt Mode MOSFET

Case Package:SOT-23

Datasheet:TN0106N3-G-P013 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	O-PBCY-T3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
Current - Continuous Drain (Id) @ 25°C	350mA Tj
Rise Time	3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	6 ns
Continuous Drain Current (ID)	350mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.35A
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	60V
Feedback Cap-Max (Crss)	8 pF
RoHS Status	ROHS3 Compliant