TN2640LG-G

new-10%

Manufacturer part number:TN2640LG-G

Manufacturer:Microchip Technology

Description:MOSFET N-CH 400V 260MA 8SOIC

Case Package:SOT-23

Datasheet:TN2640LG-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	84.99187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Tj
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	260mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.26A
Drain-source On Resistance-Max	5Ohm
Drain to Source Breakdown Voltage	400V
Height	1.65mm
Length	4.9mm
Width	3.9mm
RoHS Status	ROHS3 Compliant