SSM3J356R,LF

new-10%

Manufacturer part number:SSM3J356R,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 60V 2A SOT-23F

Case Package:SOT-23

Datasheet:SSM3J356R,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-3 Flat Leads
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	U-MOSVI
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	+10V, -20V
Continuous Drain Current (ID)	2A
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.4Ohm
DS Breakdown Voltage-Min	60V
RoHS Status	RoHS Compliant