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TK6R7P06PL,RQ

TK6R7P06PL,RQ

TK6R7P06PL,RQ

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.7m Ω @ 23A, 10V ±20V 1990pF @ 30V 26nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

TK6R7P06PL,RQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 175°C
Packaging Tape & Reel (TR)
Series U-MOSIX-H
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 66W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 30V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.46760 $0.9352
TK6R7P06PL,RQ Product Details

TK6R7P06PL,RQ Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1990pF @ 30V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

TK6R7P06PL,RQ Features


a 60V drain to source voltage (Vdss)


TK6R7P06PL,RQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK6R7P06PL,RQ applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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