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1N5809US/TR

1N5809US/TR

1N5809US/TR

Microsemi

RECTIFIER DIODE SILICON NOT SPECIFIED END Tape and Reel

SOT-23

1N5809US/TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
AEC Qualified No
Standard Package Name MELF
Supplier Package E-MELF
Military No
Mounting Surface Mount
Package Height 3.76(Max)
Package Length 5.72(Max)
Package Width 3.76(Max)
PCB changed 2
Package Shape ROUND
Manufacturer Microsemi Corporation
Packaging Tape and Reel
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Type Switching Diode
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 2
JESD-30 Code O-LELF-R2
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Diode Type RECTIFIER DIODE
Case Connection ISOLATED
Output Current-Max 3 A
Application ULTRA FAST RECOVERY
Number of Phases 1
Non-rep Pk Forward Current-Max 125 A
Reverse Recovery Time-Max 0.03 µs
RoHS Status RoHS non-compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.38000 $8.38
500 $8.2962 $4148.1
1000 $8.2124 $8212.4
1500 $8.1286 $12192.9
2000 $8.0448 $16089.6
2500 $7.961 $19902.5
1N5809US/TR Product Details

1N5809US/TR Overview


The datasheets indicate that the peak forward voltage is [email protected] any given time, this device consumes about 6 continuous forward current.The DC reverse voltage must be less than 110.With this device, a maximum output current voltage of 3 A can be read.

1N5809US/TR Features


the forward peak voltage is 0.875@4A
a maximum output current voltage of 3 A


1N5809US/TR Applications


There are a lot of Microsemi
1N5809US/TR applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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