2N2946A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N2946A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-46-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
400mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
400mW
Transistor Application
CHOPPER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
35V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1mA 500mV
Current - Collector Cutoff (Max)
10μA ICBO
Collector Emitter Breakdown Voltage
35V
Transition Frequency
5MHz
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$14.67270
$1467.27
2N2946A Product Details
2N2946A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 1mA 500mV.A transition frequency of 5MHz is present in the part.In extreme cases, the collector current can be as low as 100mA volts.
2N2946A Features
the DC current gain for this device is 50 @ 1mA 500mV a transition frequency of 5MHz
2N2946A Applications
There are a lot of Microsemi Corporation 2N2946A applications of single BJT transistors.