2N3501L Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 400mV @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).There is no device package available from the supplier for this product.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 300mA volts is possible.
2N3501L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5
2N3501L Applications
There are a lot of Microsemi Corporation 2N3501L applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
