DXT2222A-13 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.In the part, the transition frequency is 300MHz.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 600mA volts at its maximum.

DXT2222A-13 Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

DXT2222A-13 Applications

There are a lot of Diodes Incorporated DXT2222A-13 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver