BCW68GE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 2V, an efficient operation can be achieved.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.A maximum collector current of 800mA volts can be achieved.
BCW68GE6327HTSA1 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz
BCW68GE6327HTSA1 Applications
There are a lot of Infineon Technologies BCW68GE6327HTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
