MJE5731G Overview

In this device, the DC current gain is 30 @ 300mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.When VCE saturation is 1V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 10MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.

MJE5731G Features

the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz

MJE5731G Applications

There are a lot of ON Semiconductor MJE5731G applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting