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2N3585

2N3585

2N3585

Microsemi Corporation

2N3585 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3585 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Mount Through Hole
Package / Case TO-66
Number of Pins 3
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation2.5W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation2.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 2A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 25
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:2673 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.72000$13.72
10$12.47400$124.74
30$11.53833$346.1499
120$10.60292$1272.3504
270$9.66733$2610.1791
510$9.04365$4612.2615

2N3585 Product Details

2N3585 Overview


A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As a result, the part has a transition frequency of 10MHz.A maximum collector current of 2A volts can be achieved.

2N3585 Features


the emitter base voltage is kept at 6V
a transition frequency of 10MHz

2N3585 Applications


There are a lot of Microsemi Corporation 2N3585 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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