2N3585 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3585 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 2 weeks ago)
Mount
Through Hole
Package / Case
TO-66
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
2.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
2A
Transition Frequency
10MHz
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
DC Current Gain-Min (hFE)
25
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$13.72000
$13.72
10
$12.47400
$124.74
30
$11.53833
$346.1499
120
$10.60292
$1272.3504
270
$9.66733
$2610.1791
510
$9.04365
$4612.2615
1,020
$8.31600
$8.316
2N3585 Product Details
2N3585 Overview
A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As a result, the part has a transition frequency of 10MHz.A maximum collector current of 2A volts can be achieved.
2N3585 Features
the emitter base voltage is kept at 6V a transition frequency of 10MHz
2N3585 Applications
There are a lot of Microsemi Corporation 2N3585 applications of single BJT transistors.