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2N3637

  • 2N3637
  • 2N3637

2N3637

2N3637

Microsemi Corporation

2N3637 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3637 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Packaging Bulk
Published 2010
Part Status Active
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Number of Elements 1
Polarity PNP
Power Dissipation 1W
Collector Emitter Voltage (VCEO) 175V
Max Collector Current 1A
Collector Base Voltage (VCBO) 175V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $13.90520 $1390.52
2N3637 Product Details

2N3637 Overview


Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 1A volts can be achieved.

2N3637 Features


the emitter base voltage is kept at 5V

2N3637 Applications


There are a lot of Microsemi Corporation 2N3637 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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