2N3637UB Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A maximum collector current of 1A volts can be achieved.
2N3637UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
2N3637UB Applications
There are a lot of Microsemi Corporation 2N3637UB applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
